摘要
Determination of substitutional carbon in SI-GaAs thin wafers was investigated by FT-IR microscopeat room temperature for the first time.The experimental results showed that the carbon concentration inGaAs thin wafers can be measured directly with simple treatment.The calculation method of carbon concen-tration is in agreement with that for normal IR spectrum with 0.5 cm<sup>-1</sup>resolution.The resolution of1 cm<sup>-1</sup>can be taken in order to obtain a high signal-to-noise（S/N）ratio using 2.34×10<sup>16</sup>cm<sup>-2</sup>calibration factor for calculating carbon concentration at room temperature.
Determination of substitutional carbon in SI-GaAs thin wafers was investigated by FT-IR microscope at room temperature for the first time. The experimental results showed that the carbon concentration in GaAs thin wafers can be measured directly with simple treatment. The calculation method of carbon concentration is in agreement with that for normal IR spectrum with 0.5cm-1 resolution. The resolution of 1cm-1 can be taken in order to obtain a high signal-to-noise (S/N) ratio using 2.34×1016 cm-2 calibration factor for calculating carbon concentration at room temperature.
