摘要
在不添加任何反应助剂的情况下,探索采用不同的原料体系用真空固相反应方法制备高纯度Ti_3SiC_2;用X射线衍射仪研究了合成工艺条件对粉体纯度的影响,并对其反应过程和反应机理进行了探讨。结果表明:以TiH_2、硅粉和TiC粉为原料,可合成得到高纯度Ti_3SiC_2粉体,纯度均在90%以上,最高可达98.64%;TiH_2、硅粉、TiC粉体的物质的量比为1:1.25:1.9时在1 400℃时可合成纯度较高的Ti_3SiC_2,在1 500℃时Ti_3SiC_2开始分解。
Different raw material system were adopted to synthesize high purity Ti3SiC4 without any reaction additives by vaecum solid reaction. The effect of synthesis conditions on powder＇s purity was studied by X-ray diffractometer and the reaction process and mechanisms were also discussed. The results show that high-purity T3SiC2 could be synthesized by taking TiH2, Si and TiC powders as raw materials, and the purity of Ti3SiC4 was all higher than 90% and the highest purity could reach to 98. 64%. The higher purity Ti3SiC2 could he synthesize at 1 400 ℃ when the ratio of TiH2, Si and TiC powders was 1 ： 1.25 ： 1.9, and the Ti3 SiC2 started to decomposed at 1 500 ℃.
出处
《机械工程材料》
CAS
CSCD
北大核心
2011年第11期51-53,108,共4页
Materials For Mechanical Engineering
基金
国家自然科学基金资助项目(50672005)
关键词
钛硅碳
高纯度
反应机理
Tia SiC2
high-purity
reaction mechanism
