摘要
采用反应离子刻蚀技术在Si(100)表面加工微米级圆柱阵列,采用自组装技术分别制备了3种硅烷自组装分子膜.结果表明,采用反应离子刻蚀构建出的4种微米级圆柱阵列结构规整,其直径为5μm,高度为10μm,间距为15～45μm.沉积自组装分子膜后,试样表面的水接触角显著增大,其中沉积1H,1H,2H,2H-全氟癸基三氯硅烷(FDTS)自组装分子膜接触角最大,1H,1H,2H,2H-全氟辛烷基三氯硅烷(FOTS)次之,三氯十八硅烷(OTS)最小.测得的接触角大于150°时接近Cassie方程计算的接触角,而小于150°时接近Wenzel方程计算的接触角.改变圆柱阵列的间距和选择不同的自组装分子膜,可以控制表面接触角的大小.原子力显微镜(AFM)观测结果显示,沉积自组装分子膜可以产生纳米级的团簇.由微米级圆柱阵列和纳米级自组装分子膜构成的表面结构使Si试样表面接触角最大可达156.0°.
Micro scale pillar arrays on silicon（100） wafer were generated by reactive ion etching.Three self-assembled monolayers（SAMs） were prepared on etched silicon wafer by self-assembled technique.The results show that four micro pillar arrays generated by reactive ion etching possess regular structures with diameter of 5 μm,height of 10 μm and spacing of 15—45 μm.The water contact angles of silicon wafers increase significantly after SAMs deposition,in which maximum contact angle is abtained for 1H,1H,2H,2H-perfluorodecyltrichlorosilane（FDTS） deposition,medium for 1H,1H,2H,2H-perfluorooctyltrichlorosilane（FOTS） deposition and minimum for octadecyltrichlorosilane（OTS） deposition.The measured contact angles larger than 150° are close to the contact angles calculated with Cassei model.However,the measured contact angles less than 150° approach the contact angles calculated with Wenzel model.Contact angles can be controlled by adjusting spa-cing of pillar array and choosing different SAMs.Atomic force microscope（AFM） measurement show that nano scale clusters on silicon wafers appear after SAMs deposition.Maximum contact angle of 156.0° can be acquired in surface structure with micro pillar array and nano scale SAMs.
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
2011年第12期2833-2837,共5页
Chemical Journal of Chinese Universities
基金
国家自然科学基金(批准号:50975036)
辽宁省教育厅重点实验室(批准号:2008S029)资助
关键词
超疏水
接触角
反应离子刻蚀
自组装分子膜
Superhydrophobicity
Contact angle
Reactive ion etching
Self-assembled monolayer
