摘要
以多色、大面阵、高性能、低成本为特征的第三代红外探测器是当前红外探测器的发展方向及目标。InAs/GaInSbⅡ类超晶格探测器因为独特的断代能带结构以及自身存在的材料和器件优势,在大面阵长波红外探测器、高温中波红外探测器、中波双色探测器以及甚长波红外探测器领域显示出优异的器件性能和技术成熟性,成为第三代红外探测器技术的最佳选择之一,在世界各国引起了高度的重视和发展。就InAs/GaInSbⅡ类超晶格材料的优越性、存在的问题及近期的发展状况进行了介绍,旨在促进我国InAs/GaInSbⅡ类超晶格技术的发展。
The Third-Generation infrared detectors characterized as multicolor, large array, high pertbrmance and low cost have become the development goal of the infrared detectors. InAs/GalnSb Type-II infrared materials has special broken band structure and materials merits, furthermore, the materials has been widely applied in the area of large array long wavelength infrared detectors, high temperature mid-wavelength infrared detectors, middle wavelength dual-band infrared detectors and ultra-long wavelength infrared detectors. The superior devices performance with high detectivity and excellent uniformity verified the technology superiority and maturity. It has become one of the best choices as the Third-Generation infrared detectors in the world. In this paper the material advantages, the technique issues and development status has been introduced in order to advance the development of InAs/GaInSb type- II technology in our country.
出处
《红外技术》
CSCD
北大核心
2011年第11期621-624,638,共5页
Infrared Technology
基金
国家自然基金与云南联合基金U1037602支持
