期刊文献+

Effects of notches on the order of flux-closure state formation in bi-rings by micromagnetic simulation

Effects of notches on the order of flux-closure state formation in bi-rings by micromagnetic simulation
原文传递
导出
摘要 The effects of the number and the location of notches on the formation of flux-closure states in bi-rings with fields applied in the x direction (i.e., along the short axis direction of hi-rings) and y direction (i.e., along the long axis direction of bi-rings) are investigated using micromagnetic simulation. For the bi-rings with one notch and the bi-rings with two notches symmetric about y axis, the order of flux-closure state formation in each ring can be controlled. But the flux-closure state forms simultaneously in each ring for the bi-rings with two notches symmetric about x axis. For the bi-rings with two notches that are symmetric neither about x axis nor about y axis, only one ring can form a flux- closure state in the y-direction field and no fluxclosure state can be found in rings in the x-direction field. Therefore, logic states can be defined by controlling the order of flux-closure state formation, which can be utilized in future logic devices. The effects of the number and the location of notches on the formation of flux-closure states in bi-rings with fields applied in the x direction (i.e., along the short axis direction of hi-rings) and y direction (i.e., along the long axis direction of bi-rings) are investigated using micromagnetic simulation. For the bi-rings with one notch and the bi-rings with two notches symmetric about y axis, the order of flux-closure state formation in each ring can be controlled. But the flux-closure state forms simultaneously in each ring for the bi-rings with two notches symmetric about x axis. For the bi-rings with two notches that are symmetric neither about x axis nor about y axis, only one ring can form a flux- closure state in the y-direction field and no fluxclosure state can be found in rings in the x-direction field. Therefore, logic states can be defined by controlling the order of flux-closure state formation, which can be utilized in future logic devices.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第12期421-425,共5页 中国物理B(英文版)
基金 Project supported by the National Natural Science Foundation of China (Grant No. 50801033)
关键词 notch(es) the order flux-closure state formation micromagnetic simulation notch(es), the order flux-closure state formation, micromagnetic simulation
  • 相关文献

参考文献24

  • 1Lai M F, Liao C N, San Z H, Lee C P, Hsieh Y Pand Ho T F 2008 J. Appl. Phys. 103 07C517.
  • 2Wen Z C, Wei H X and Han X F 2007 Appl. Phys. Left. 91 122511.
  • 3Han X F, Wen Z C and Wei H X 2008 J. Appl. Phys. 103 07E933.
  • 4Wang J B, Zhang B, Liu Q F, Ren Y and Liu R L 2009 J. Appl. Phys. 105 083908.
  • 5Rose V, Buchanan K, Chung S H, Grimsditch M, Metlushko V, Hoffmann A, Novosad V, Bader S D and Ibach H 2006 Phys. Rev. B 73 094442.
  • 6van Waeyenberge B, Puzic A, Stoll H, Chou K W, Tyliszczak T, Hertel R, F-hnle M, Briick H, Rott K, Reiss G, Neudecker I, Weiss D, Back C H and Schiitz G 2006 Nature 444 461.
  • 7Jin W and Liu Y W 2010 Chin. Phys. B 19 037001.
  • 8Zhu J G, Zheng Y and Prinz G A 2000 J. Appl. Phys. 87 6668.
  • 9Zheng Y K, Wu Y H, Li K B, Qiu J J, Shen Y T, An L H, Guo Z B, Han G C, Luo P, You D and Liu Z Y 2003 J. Appl. Phys. 93 7307.
  • 10Han X F, Wei H X, Peng Z L, Yang H D, Feng J F, Du G X, Sun Z B, Jiang L X, Qin Q H, Ma M, Wang Y, Wen Z C, Liu D P and Zhan W S 2007 J. Mater. Sci. Technol. 23 304.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部