摘要
采用分子束外延(MBE)技术在表面生长碲化镉(CdTe)介质膜的p型碲镉汞(HgCdTe)材料,并通过离子注入区的光刻、暴露HgCdTe表面的窗口腐蚀、注入阻挡层硫化锌(ZnS)的生长、形成p-n结的B+注入、注入阻挡层的去除、绝缘介质膜ZnS的生长、金属化和铟柱列阵的制备等工艺,得到了原位CdTe钝化的n+-on-p平面型HgCdTe红外光电二极管列阵.从温度为78 K的电流与电压(I-v)和动态阻抗与电压(R-v)特性曲线中,发现原位CdTe钝化的光电二极管列阵的零偏动态阻抗比非原位CdTe钝化的提高了1～2倍,零偏压附近的反向偏压位置的动态阻抗极大值甚至提高了30～40倍.对于工作在反向小偏压附近的光电二极管列阵,原位CdTe钝化方法非常有利于提高长波光电二极管的探测性能.
The results of HgCdTe long-wavelength infrared n＋-on-p planar photodiode arrays passivated by molecular beam epitaxy（MBE） in-situ grown CdTe film were presented in this paper.By mercury-vacancy p-type annealing,ion-implantation window exposure,ZnS ion-implantation barrier layer deposition,B＋-implantation,ion-implantation barrier layer removal,ZnS dielectric film deposition,metallization and indium-bump arrays fabrication,HgCdTe long-wavelength infrared n＋-on-p planar photodiode arrays using in-situ CdTe passivation was achieved from a Hg1-xCdxTe film covered with a layer of MBE in-situ grown CdTe film.Zero bias dynamic resistances of HgCdTe photodiode arrays using in-situ CdTe passivation were improved 1~2 times higher than those of non-in-situ CdTe passivation processed one,and the maximum dynamic resistances near small reverse biases were even increased by a factor of 30~40.Since their current-voltage curves were all measured at 78K,it is obvious that in-situ CdTe passivation was beneficial to suppress dark current of n＋-on-p planar photodiode by optimizing the interface between the HgCdTe detector and CdTe passivation layer,and then to enhance the performance of long-wavelength infrared photodiode arrays operating at small reverse biases.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2011年第6期495-498,517,共5页
Journal of Infrared and Millimeter Waves
基金
中国科学院国防科技创新基金(cxjj-10-m29)
国家自然科学基金((6070612)
关键词
碲镉汞
分子束外延
原位碲化镉钝化
动态阻抗
HgCdTe
molecular beam eptaxy
in-situ CdTe passivation
dynamic resistance
