摘要
通过正交实验设计,对Ga掺杂ZnO导电粉的制备工艺进行优化,确定出其最优参数为:掺杂比2mol%,反应温度85℃,反应时间10 h,煅烧温度550℃。利用XRD、SEM和XPS对样品的性能进行检测,结果表明,按此条件制备的掺杂样品,经测量其电阻率为3.3×104Ω.cm。
eAbstract：The optimum treatment conditions were got by using the orthogonal experimental design,confirmed that doping ratio for 2mol%,reaction temperature for 85 ＂C , reaction time for 10h, the calcining temperature for 550~C.XRD, SEM, and XPS were used to charac- terize the synthesized ZnO particl. It was found that the volume resistivity of the zinc oxide, decreases to 3.3×10^4Ω.cm
出处
《电工材料》
CAS
2011年第4期36-39,共4页
Electrical Engineering Materials
关键词
Ga掺杂
ZnO导电粉
正交实验
均相沉淀
Ga-doped
conductive ZnO powder
orthogonal experimental design
homogeneousprecipitation
