摘要
选取单晶硅作为隔热衬底,Bi和Sb材料作为靶材,采用磁控溅射技术溅射制备多层复合纳米薄膜。研究了当固定调制周期为40nm,Bi和Sb的调制比分别为1∶1、3∶2、4∶1和1∶4时,Bi/Sb超晶格复合薄膜的See-beck系数、电导率和功率因子在160～250K温度范围内随温度的变化。发现当调制比为1∶4时,Bi/Sb薄膜的功率因子明显高于其它3种情况。
The nano multi-layer composite material thin film, with single-crystal silicon as thermal insulation substrate and I3i and Sb as sputter targets respectively, was prepared by magnetron sputtering. At the same value of modulation periods（40nm）, four different Bi/Sb modulation ratios： 1 ： 1,3 ： 2,4 ：1,1 ： 4, were used. The Seebeck coefficient, electric conductivity and power factor of the superlattice composite thin films , composed of Bi and Sb, varied with the variation of temperature which ranged from 160K to 250K. It could he found that the power factor was significantly better with the modulation ratio 1 - 4 than with the other modulation ratios.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2012年第2期98-100,111,共4页
Materials Reports
基金
国家自然科学基金(50706012)
