摘要
本文介绍了采用直流磁控反应溅射技术，在氩氧混合气体条件下制备掺锡氧化铟薄 膜（简称 ＩＴＯ膜）的工艺。给出的 ＤＰＳ、ＡＥＳ、ＸＰＣ的分析结果表明： ＩＴＯ薄膜 的成份为 Ｉｎ＿２Ｏ＿３和 ＳｎＯ＿２组成；其 ＩＴＯ薄膜为立方结构。
The process which is used to prepare the TiN-doped indium oxide film in argon-oxygen mixture by D.C magnetron reactive sputtering is presented in this paper.The analyzing results by DPS,AES and XPC show that the ITO film is consisted of In_2O_3 and SnO_2, and is the cubic structure.
出处
《真空》
CAS
北大核心
1990年第4期11-14,10,共5页
Vacuum
