摘要
带隙基准源在各种芯片中应用广泛,很多电子系能的性能直接受基准源的影响。论文提出一种采用电阻修整的带隙基准源的设计方法,通过修整来调节基准源由于受工艺等因素影响而产生的偏差,仿真结果表明,在-50℃到130℃的温度范围,基准源的电压偏差为2mV。
Band-gap reference is widely applied in many kinds of chip, and it even ＂affects the performance of these electronics system directly. The paper presents a band-gap trimmed by some resistors, through the technique of trim the error caused by VLSI process is decreased, the simulation results show deviation of the voltage reference is only 2mV with the temperature changing from -50℃ to 130℃.
出处
《科技信息》
2012年第1期232-232,191,共2页
Science & Technology Information
关键词
带隙基准
温度系数
电源抑制比
Band-gap
Temperature coefficient
Power supply rejection ratio
