期刊文献+

弥散铁电陶瓷的峰值介电常数对频率的依赖关系研究 被引量:1

The Dependence of the Maximum of Dielectric Constant on Frequency for Diffuse Ferroelectrics
下载PDF
导出
摘要 采用传统固相合成法制备了锆掺杂的钛酸钡陶瓷Ba(Zr0.15Ti0.85)O3(BZT),并对其介电性能进行了研究.发现1 280℃烧结的BZT陶瓷的介电性能呈现明显的弥散性相变和弛豫特点.用Smolenski成分起伏理论结合德拜弛豫理论计算了BZT的介电常数峰值εrm与频率的关系,与实验结果吻合较好. Barium zirconium titanate Ba(Zr0.15Ti0.85)O3(BZT) ceramic was prepared via the traditional solid state reaction and its dielectric properties were studied.The BZT ceramic sintered at 1 280 ℃obviously showed dielectric characteristics with diffuse phase transition and relaxation.The frequency dependence of maximum of dielectric constant had been obtained by integrating Smolenski theory with the Debye relaxation theory.The theoretical results agreed well with the experimental data.
出处 《河南大学学报(自然科学版)》 CAS 北大核心 2012年第1期17-19,23,共4页 Journal of Henan University:Natural Science
基金 国家自然科学基金资助项目(50972056) 河南科技大学科研创新能力培育基金项目(2010CZ20017)
关键词 固相法 BZT陶瓷 相变弥散 介电弛豫 solid state reaction BZT ceramic dielectric relaxation diffusive phase transition
  • 相关文献

参考文献17

二级参考文献40

  • 1王晓慧,赵纯,王子忱,吴凤清,赵慕愚.BaTiO_3纳米晶的合成与表征[J].高等学校化学学报,1994,15(2):159-162. 被引量:19
  • 2(日)足立吟也.无机材料科学[M].北京:科学出版社,1994.67.
  • 3吴淑英.-[J].功能材料,1995,26(5):427-427.
  • 4钟维烈.铁电物理学[M].北京:科学出版社,1996..
  • 5Hamaji Y, Sano H, Wada H, et al. Effect of rare earth oxides on X7R dielectrics [A]. In Proceedings of the Seventh US-Japan Seminar on Dielectric and Piezoelectric Ceramics [C]. 1995 Nov 14-17; Tsukuba, Japan. Tsukuba, 1995, Ⅳ- 5: 273.
  • 6Okino Y, Shizuno H, Kisi H. Dielectric properties of rare-earthoxide-doped BaTiO3 ceramics fired in reducing atmosphere [J ].Jpn. J. Appl. Phys., 1995, 34: 5389.
  • 7Ohfuji S,hsumi M,Akiya H. [J]. Jpn J Appl Phys, 1997,36:5854-5859.
  • 8Varadan V K, Jose K A, Varadan V V,et al. [J]. Microwave Journal, 1995,10(3) :244-254.
  • 9Fernandez F, Caballero A C, Duran P, et al. [J]. J Mater Sei,1996,31:975-981.
  • 10Outzourhit A, et al. [J]. J Mater Res, 1995, 10(6): 1411-1417.

共引文献37

同被引文献22

  • 1Strukov B A, Levanyuk A P. Ferroelectric Phenomena in Crystals [ M ]. Berlin:Springer, 1998:95 -132.
  • 2Hoffmann S,Waser R. Curie-Weiss Law of ( Ba1-x Srx ) TiO3 Thin Films Prepared by Chemical Solution Deposition [ J ]. J Phys IV France, 1998 ( 8 ) : 221 - 224.
  • 3Boikov Y A,Claeson T. Impact of Domain Wall Displacements on the Dielectric Permittivity of Epitaxial Bao.5 Sro.sTiO3 Films[ J ]. J Appl Phys ,2001,89 ( 13 ) :2052 - 2054.
  • 4Ihlefeld J F, Vodnick A M, Baker S P, et al. Extrinsic Scaling Effects on the Dielectric Response of Ferroelectric Thin Films [ J ] J Appl Phys,2008,103 ( 7 ) : 112 - 117.
  • 5Zhang L, Zhai J W, Yao X. Dielectric Properties of Electrophoretically Deposited and Isothermally Pressed BaTiO3 Thick Films [ J ]. J Am Ceram Soc,2008,91 ( 6 ) : 2075 - 2077.
  • 6Y u Z, Ang C, Guo R Y, et al. Ferroelectric-relaxor Behavior of Ba ( Tio. 7 Zr0.3 ) 03 Ceramics [ J ]. J Appl Phys, 2002,92 ( 5 ) : 2655 - 2657.
  • 7Jing Z, Ang C, Yu Z, et al. Dielectric Properties of Ba ( Ti1- yYy ) 03 Ceramics [ J ]. J Appl Phys, 1998,84 ( 2 ) :983 - 986.
  • 8喻惠武,朱卫利,李立本,等.锆掺杂的钛酸钡制备及介电性质研究[J].电子科技大学学报,2011,40(suppl):201—203.
  • 9Pertsev N A,Zembilgotov A G,Tagantsev A K. Effect of Mechanical Boundary Conditions on Phase Diagrams of Epitaxial Ferroelectric Thin Films [ J ]. Phys Rev Lett, 1998,80 ( 3 ) : 1988 - 199 1.
  • 10Tagantsev A K,Pertsev N A, Murah P, et al. Strain-induced Diffuse Dielectric Anomaly and Critical Point in Perovskite Ferroelectric Thin Films[J] Phys Rev B ,2001,65 ( 1 ) :2 - 5.

引证文献1

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部