摘要
In contrast to uncoated substrate, a nonlinear relationship of phase shift with the thicknesses of the thin film makes the calculation of wavefront aberration complicated. A program is compiled to calculate the wavefront aberration of multilayer thin film produced by thickness nonuniformity. The physical thickness and the optical phase change on reflection are considered. As an example, the wavefront aberration of the all-dielectric mirror is presented in ArF excimer lithography system with a typical thickness distribution. In addition, the wavefront errors of the thin film at wavelengths of 193 and 633 nm are compared in the one-piece and two-piece arrangements. Results show that the phase shift upon reflection of the thin film produced by thickness nonuniformity is very sensitive to the incident angle, wavelength, and polarization.
In contrast to uncoated substrate, a nonlinear relationship of phase shift with the thicknesses of the thin film makes the calculation of wavefront aberration complicated. A program is compiled to calculate the wavefront aberration of multilayer thin film produced by thickness nonuniformity. The physical thickness and the optical phase change on reflection are considered. As an example, the wavefront aberration of the all-dielectric mirror is presented in ArF excimer lithography system with a typical thickness distribution. In addition, the wavefront errors of the thin film at wavelengths of 193 and 633 nm are compared in the one-piece and two-piece arrangements. Results show that the phase shift upon reflection of the thin film produced by thickness nonuniformity is very sensitive to the incident angle, wavelength, and polarization.
基金
supported by the National Natural Science Foundation of China under Grant Nos.60878045 and 10976030
