摘要
神经MOS晶体管是1991年发明出来的一种具有高功能度的多输入栅控制的浮栅MOS器件。本文介绍了它的基本结构和特点,论述了这种新器件及其电路的国外研究现状。
The neuron MOS transistor was invented in 1991.It is a high functional floating gate MOS transistor with multiple input control gates.In this paper,the basic configuration and main characteristics of the neuron MOS transistor are introduced.The status quo and trend for the studies on this kind of new device and its integrated circuits are reviewed.The researches,which the authors have made,are also presented.
出处
《半导体技术》
CAS
CSCD
北大核心
2000年第1期2-7,共6页
Semiconductor Technology
