摘要
为了深入研究p型Si衬底的有机光电探测器的工艺条件对器件光电性能的影响,本文利用Dektak-8型α台阶仪及高分辨率Topometrix Exptorer型原子力显微镜(AFM),对不同衬底温度及蒸发条件下沉积的有机薄膜表面厚度进行了测量;采用拓扑和侧向力接触两种模式,对其表面形貌及其变化规律进行了研究;对制成的光电探测器的光电性能进行了测试分析。结果表明,PTCDA在p-Si(100)表面形成的多晶薄膜呈岛状形态,岛的大小及形貌受制备工艺条件的影响;当衬底温度为50℃、PTCDA的蒸发温度为420℃和蒸发时间为15s时,蒸发薄膜的厚度为135nm;测得器件的最大光电流为92μA,暗电流为7nA。实现了衬底温度及蒸发条件的最佳化。
In order to study the influence of process conditions on optical properties of organic photodetector with p-type Si substrate,using the Dektak-8 a-step instrument and high-resolution Topometrix Exptorer atomic force microscope （AFM）, the organic film thicknesses deposited on the surface under different conditions of substrate temperature and evaporation were measured. By means of topology and lateral foree, contact the variation of the surface morphology was studied. The electro-optical properties photodetector of were tested. The results indicate that the polycrystalline thin film formed on the surface shows island form. The size and morphology of the island are affected by preparation process conditions. When the substrate temperature is 50 ℃, PTCDA evaporation temperature is 420 ℃, and evaporation time is 15 s,its evaporation thickness is 135 nm. The measured maximum photocurrent is 92uA,and the dark current is 7 nA. The optimal substrate temperature and evaporation condition are realized.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2012年第3期439-444,共6页
Journal of Optoelectronics·Laser
基金
国家自然科学基金(60676065)
甘肃省教育厅高等学校研究生导师科研基金(90913-06)资助项目
关键词
SI衬底
温度
蒸发条件
有机光电探测器
影响
Si substrate
temperature
evaporation condition
organic photodetector
influence
