期刊文献+

ITO透明导电薄膜厚度与光电性能的关系 被引量:16

Relationship between Optical/Electrical Properties and the Thickness of the ITO Films
下载PDF
导出
摘要 透明导电薄膜的厚度制约其光电性质。本研究利用磁控溅射技术制备了厚度变化范围为200-1500nm的ITO薄膜,探索了薄膜颜色、可见光透过率、面电阻与膜厚的关系。薄膜颜色随着膜厚的增加呈现有规律的变化,可见光透过率随薄膜厚度的增加而呈现振荡下降趋势,并出现了极大值(紫红色),振荡趋势可用多光束干涉解释;薄膜面电阻随膜厚的增加呈减小趋势,薄膜厚度为1387nm时,面电阻为1.3Ω/□,薄膜最小电阻率为1.8×10-4Ω.cm。文章给出了可以通过选择恰当的薄膜厚度,以尽可能满足透明导电薄膜面电阻、透过率两个相互矛盾的指标。 The optical and electrical properties of thin film were influenced by the thickness.The thickness of the indium-tin-oxides(ITO) films range from 200nm to 1500nm were deposited by magnetron sputtering.The relationship between thickness and color,optical transmittance,sheet resistance was investigated.The color of thin film was changed by increasing the thickness.The optical transmittance dropped oscillation by increase of the thickness,and has maximum value(mauve color),the trend of oscillation conform to multi-beam interference condition.The square resistance of the film was reduced by increasing the film thickness.When the thickness of the thin film is 1387nm,the sheet resistance is 1.3Ω/□ and the minimum electrical resistivity is 1.8×10-4Ω·cm.This study showed that the optical transmittance and square resistance were controlled by the thickness of the thin film.
出处 《材料科学与工程学报》 CAS CSCD 北大核心 2012年第1期14-16,共3页 Journal of Materials Science and Engineering
基金 科研院所技术开发研究资助项目(2009EG232255)
关键词 ITO 可见光透过率 面电阻 透明导电氧化物 ITO film transmittance square resistance transparent conducting oxide
  • 相关文献

参考文献7

  • 1Tadatsugu Minam.Present status of transparent conductingoxide thin-film development for Indium-Tin-Oxide(ITO)substitutes[J].Thin Solid Films,2008,516(17):5822~5828.
  • 2王德苗,黄士勇,任高潮,陈抗生.真空和大气退火对 ITO 膜特性的影响[J].浙江大学学报(自然科学版),1997,31(4):533-538. 被引量:9
  • 3Youn J Kim,Su B Jin,et al.Study on the electrical propertiesof ITO films deposited by facing target sputter deposition[J].J.Phys.D:Appl.Phys.,2009,42:075412.
  • 4E.Celik,U.Aybarc,et al.ITO films on glass substrate by sol-gel technique:synthesis,characterization and optical properties[J].Journal of Sol-Gel Science and Technology,2009,50(3):337~347.
  • 5余刚,王慧,刘静.ITO薄膜光电性能红外—可见光谱分析方法[J].玻璃,2007,34(3):6-8. 被引量:2
  • 6M.D.Benoy,E.M.Mohammed,et al.Thickness dependenceof the properties of indium tin oxide(ITO)films prepared byactivated reactive evaporation[J].Brazilian Journal of Physics,2009,39:4~7.
  • 7陈丽菊,肖胜利,朱峰,任文辉.对光学薄膜反射率的讨论[J].太原师范学院学报(自然科学版),2005,4(3):77-78. 被引量:4

二级参考文献6

  • 1Ma H L,Thin Solid Films,1995年,263卷,105页
  • 2Howson R P, Ridge M I, Bishop C A. Production of transparent electrically conducting films by ion plating [J].Thin Solid Films, 1981, 80:137-140
  • 3Shanti E, Dutta V, Banerjee A, et al. Electrical and optical properties of undoped and antimony--doped tin oxide films [J].J Appl Phys, 1980, 53:1619--1624
  • 4Haacke G. New figure of merit for transparent conductors [J]. J Appl Phys, 1976, 47:4086
  • 5范志新.ITO薄膜载流子浓度的理论上限[J].现代显示,2000(3):18-22. 被引量:19
  • 6陶海华,姚宁,辛荣生,边超,张兵临.ITO透明导电薄膜的制备及光电特性研究[J].郑州大学学报(理学版),2003,35(4):37-40. 被引量:15

共引文献12

同被引文献149

引证文献16

二级引证文献58

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部