摘要
介绍了深槽LIP太阳能电池栅线电极的制造方法,对LIP工艺及装置进行了详细的说明。通过试验表明,用新工艺制造的太阳能电池片的转换效率可达19.4%。讨论了与传统工艺相比较,深槽LIP太阳能电池片在光学和电学性能上的提升机理。
Introduce a method for high aspect ratio on silicon solar cell grid structure by light-induced plating process （LIP）. Explicate the technology of LIP in detail., efficiency of silicon solar cell is increased up to 19.4% with the new process through the test. The principle is discussed on optical and electrical capabilities of solar cells by LIP comparing with the traditional process.
出处
《电子工艺技术》
2012年第2期102-105,共4页
Electronics Process Technology
基金
电子发展基金项目(2009)
山西省科技创新项目(2010)
