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Calculated Structure,Elastic and Electronic Properties of Mg_2Pb at High Pressure 被引量:1

Calculated Structure,Elastic and Electronic Properties of Mg_2Pb at High Pressure
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摘要 The effects of high pressure on structure, elastic and electronic properties of the intermetallic MgzPb were calculated by the first-principles plane wave pseudo-potential method in the scheme of density functional theory (DFT) within the generalized gradient approximation. The elastic constants and Debye temperature obtained at 0 GPa are in good agreement with the available experiment data and other theoretical results. The electronic properties calculated suggest that the electronic density of states (DOS) at the Fermi level decreases under high pressure. The effects of high pressure on structure, elastic and electronic properties of the intermetallic MgzPb were calculated by the first-principles plane wave pseudo-potential method in the scheme of density functional theory (DFT) within the generalized gradient approximation. The elastic constants and Debye temperature obtained at 0 GPa are in good agreement with the available experiment data and other theoretical results. The electronic properties calculated suggest that the electronic density of states (DOS) at the Fermi level decreases under high pressure.
出处 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2012年第2期377-381,共5页 武汉理工大学学报(材料科学英文版)
基金 Funded by the National Natural Science Foundation of China (No.50871049) the National High-Tech Research and Development Program of China (863 Program) (No.2009AA03Z512)
关键词 Mg2Pb elastic constants debye temperature electronic properties DOS Mg2Pb elastic constants debye temperature electronic properties DOS
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参考文献24

  • 1段永华,孙勇,彭明军,鲁俐,赵如龙.金属间化合物Mg_2Pb的电子结构和弹性性质[J].中国有色金属学报,2009,19(10):1835-1839. 被引量:3
  • 2Ramachandran V, Ibrahim M Md. Third-order Elastic Constants and the Low-temperature Limit of the Grtineisen Parameter of Mg2Pb on Axe's Shell Model[J]. J. Low Temp. Phys., 1982, 47(3-4):351-353.
  • 3Van Dyke J P, Herman F. Relativistic Energy-Band Structure of Mg2Pb[J]. Phys. Rev. B, 1970, 2(6):1 644-1 646.
  • 4Van Attekum P M Th M, Wertheim G K, Crecelius G, et al. Electronic Properties of Some CaF2-structure Intermetallic Compounds[J]. Phys. Rev. B, 1980, 22(8):3 999-4 004.
  • 5Peter M L. Electronic Structure of Magnesium Silicide and Magnesium Gemanide[J]. Phys. Rev., 1964, 135(4A): AI I10-AI 114.
  • 6Wood D M, Alex Zunger. Electronic Structure of Generic Semicond- uctors: Antifluorite Silicide and III-VCompounds[J]. Phys. Rev. B, 1986, 34(6):4 105-4 120.
  • 7Stringer G A, Higgins R J. Fermi Surface of MgzPb[J]. Phys. Rev. B, 1971, 3(2):506-515.
  • 8Duan Y H, Sun Y, Feng J, et al. Thermal Stability and Elastic Proper- ties of Intermetallics Mg2Pb[J]. Physica B." Condensed Matter, 2010, 405(2):701-704.
  • 9Morko9 H, Mohammad S N. High-luminosity Blue and Blue-green Gallium Nitride Lightemitting Diodes[J]. Science, 1995, 267(5194):51-55.
  • 10Maachou A, Amrani B, Driz M. Structural and Electronic Properties of III-V Scandium Compounds[J]. Physiea B: Condensed Matter, 2007, 388(1-2):384-389.

二级参考文献23

  • 1BLASKETT D R, BOXALL D. Lead and its alloys[M]. West Sussex: Ellis Horwood Ltd, 1990: 15.
  • 2FU C L, PAINTER G S. First principles investigation of hydrogen embrittlement in FeAl[J]. J Mater Res, 1991, 6(4):719-723.
  • 3FOX A G, TABBERNOR M A. The bonding charge density of β'NiAl[J]. Acta Metallurgica et Materialia, 1991, 39(4): 669-678.
  • 4YOO M H, FU C L. Fundamental aspects of deformation and fracture in high-temperature ordered intermetallics[J]. ISIJ International, 1991, 31(10): 1049-1062.
  • 5van DYKE J P, HERMAN F. Relativistic energy-band structure of Mg2Pb[J]. Phys Rev B, 1970, 2(6): 1644-1646.
  • 6van ATTEKUM P M TH M, WERTHEIM G K, CRECELIUS G, WERNICK J H. Electronic properties of some CaF2--Structure intermetallic compounds[J]. Phys Rev B, 1980, 22(8): 3998-4004.
  • 7LEE P M. Electronic structure of magnesium silicide and magnesium germanide[J]. Phys Rev, t964, 135(4A): A1110-A1114.
  • 8WOOD D M, ZUNGER A. Electronic structure of generic semiconductors: Antifluorite silicide and III-Vcompounds[J]. Phys Rev B, 1986, 34(6): 4105-4120.
  • 9SEGALL M D, LINDAN P J D, PROBERT M J, PICKARD C J, HASNIP P J, CLARK S J, PAYNE M C. First-principles simulation: ideas, illustrations and the CASTEP code[J]. J Phys: Condens Matter, 2002, 14(11): 2717-2744.
  • 10MARLO M, MILMAN V. Density-functional study of bulk and surface properties of titanium nitride using different exchange-correlation functionals[J]. Phys Rev B, 2000, 62(4): 2899-2907.

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