摘要
介绍了当前绝缘栅双极晶体管(IGBT)的几种结构及沟槽型IGBT的发展现况,分析了高电压沟槽型非穿通(NPT)IGBT的结构及工艺特点。通过理论分析计算出初步器件的相关参数,再利用ISE仿真软件模拟器件的结构及击穿和导通特性,结合现有沟槽型DMOS工艺流程,确定了器件采用多分压环加多晶场板的复合终端、条状元胞、6μm深度左右沟槽、低浓度背面掺杂分布与小于180μm厚度的器件结构,可以很好地平衡击穿特性与导通特性对器件结构的要求。成功研制出1 200 V沟槽型NPT系列产品,并通过可靠性考核,经过电磁炉应用电路实验,结果表明IGBT器件可稳定工作,满足应用要求。该设计可适合国内半导体生产线商业化生产。
The structures of isulated gate bipolar transistor （IGBT） and current status of the trench IGBT devices development were introduced. Then the structure and process features of high-voltage trench non-punch-through （NPT） IGBT devices were analyzed. After the dimension was computed, the device structure, breaking and conducting characteristics were simulated by ISE software, Combining with the trench DMOS process flow, the devices adopted field rings and poly field plate, strips of cell, 6 um depth of trench, low concentration doped back side and less than 180 um thickness. The requirement between blocking and conducting characteristics can be satisfied well. A series of 1 200 V NPT trench IGBT expanded successfully by Huajing, reliability test passed, and IGBT device worked well on induction cooker （IH）. The trench IGBT can be produced commercially for domestic semiconductor production lines.
出处
《半导体技术》
CAS
CSCD
北大核心
2012年第4期258-262,共5页
Semiconductor Technology
关键词
电力半导体器件
高压
沟槽
非穿通
绝缘栅双极晶体管
power device
high-voltage
trench
non-punch-through （NPT）
insulated gatebipolar transistor （IGBT）
