摘要
采用不同烧结温度（1 000~1 120℃）制备ZnO压敏电阻瓷,通过扫描电镜分析显微结构,探讨烧结温度对ZnO压敏电阻瓷小电流性能的影响机理。结果表明：烧结温度在1 020℃、保温90 min时,ZnO压敏电阻瓷的性能较好,电位梯度达到408 V/mm,漏电流为1.8μA,非线性系数为37;烧结温度在1 000℃时,电位梯度可达475 V/mm。
ZnO varistor was prepared with different sintering temperature.The microstructure was analyzed by SEM and the effect of sintering temperature on electrical properties of ZnO varistor was investigated.The results show that ZnO varistor with sintering temperature 1 020 ℃ and holding for 90 min can obtain better nonlinear electrical properties,the value of gradient voltage reaches 408 V/mm,while the leakage current and nonlinear coefficient are 1.8 μA and 37,respectively;the value of gradient voltage reaches 475 V/mm when sintering temperature is 1 000 ℃.
出处
《兵器材料科学与工程》
CSCD
北大核心
2012年第3期69-71,共3页
Ordnance Material Science and Engineering
关键词
ZNO压敏电阻
低温烧结
电性能
ZnO varistor
low-temperature sintering
electrical properties
