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不同衬底上溅射TiO_2薄膜的光学性能研究 被引量:1

Study on optical properties of TiO_2 films deposited ondifferent substrates by sputtering
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摘要 在硅片和石英上利用射频溅射法沉积了TiO2薄膜,并分别在空气中进行了退火处理。利用椭偏光谱仪对硅片上薄膜进行了椭偏测试,利用紫外-可见分光光度计对石英上薄膜进行了透射光谱测试。利用解谱软件对椭偏谱和透射谱进行了建模解谱,获得了不同基片上薄膜在不同退火温度下的折射指数和消光系数,发现和TiO2块材的光学常数也有明显的区别。通过计算得到了系列薄膜的光学带隙,带隙值范围从3.35~3.88eV,可以为薄膜态TiO2体系的光学应用、设计和相关理论研究提供一定的依据。 TiO2 thin films were deposited on Si and quartz substrates via radio-frequency magnetron sputtering and post annealed at different temperatures in atmosphere.The transmittance of the films deposited on quartz and ellipsometric spectra of the films on Si were obtained by UV-Vis spectrophotometer and spectroscopic ellipsometer,respectively.The optical constants of the films deposited on different substrates were extracted by fitting the transmittance and ellipsometric spectra,and were found obviously different from those of TiO2 bulk material.The band gaps of the films were also determined and the values vary from 3.35 to 3.88eV.Our results would be helpful for the design and application of TiO2 filmsystem and related theoretical studies.
作者 叶剑 曹春斌
出处 《功能材料》 EI CAS CSCD 北大核心 2012年第11期1443-1445,1449,共4页 Journal of Functional Materials
基金 国家自然科学基金资助项目(50872001) 安徽省高等学校省级自然科学研究资助项目(KJ2008B015 KJ2010A123) 安徽省信息材料与器件重点实验室开放基金支持
关键词 射频磁控溅射 TIO2薄膜 椭圆偏振技术 光学性能 radio-frequency magnetron sputtering TiO2 thin films spectroscopic ellipsometry optical properties
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  • 1Paz Y, Luo Z, Rabenberg L, et al. Photooxidative selfcleaning transparent titanium dioxide films on glass[J]. Mater Res, 1995, 10: 2842.
  • 2Vailh6 C, Farkas D. Shear faults and dislocation core structures in B^2CoA1 [J]. Mater Res, 1997,12.. 2759.
  • 3Choi W, Hong S J, Chang Y S,et al. Photocatalytic Degradation of Polychlorinated Dibenzo-p-dioxins on TiOz film under UV or solar light irradiation [J]. Enviro Sci Technol, 2000,34.. 4810.
  • 4Feroni M, Guidy V, Martielli G,et al. Gas-sensing applications of W-Ti-O-based nanosized thin films prepared by RF reactive sputtering [J]. Sens Actuators B, 1997, 44: 499-502.
  • 5Byoung H L, Yongjoo J, Keith Z,et al. Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon[J]. Appl Phys Lett, 1999, 74: 3143.
  • 6Wolf S A, Awschalom D D, Buhrman R A, et al. Spintronics: a spin-based electronics vision for the future[J]. Science, 2001,294: 1488-1495.
  • 7Macdonald A H, Schiller P, Samarth N. Ferromagnetic semiconductors., moving beyond (Ga,Mn)As [J]. Nature Materials, 2005,4 : 195-202.
  • 8Nazmul A M, Sugahara S, Tanaka M. Transport properties of Mn-doped GaAs and the effect of selective doping [J]. Appl Phys Lett, 2002, 80.. 3120-3122.
  • 9Miao L, Tanemura S, Jin P,et al. Simultaneous epitaxial growth of anatase and futile TiO^2 thin films by RF helicon magnetron sputtering [J]. Crystal Growth, 2003, 254: 100-106.
  • 10Tanemura S, Miao L, Jin P, et al. Optical properties of polycrystalline and epitaxial anatase and rutile TiO^2 thin films by RF magnetron sputtering [J]. Appl Surf Sci, 2003, 212-213.. 654-660.

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