摘要
纳米多孔硅是一种潜在的化学和生物传感材料,本文采用电化学腐蚀法制备纳米多孔硅。采用SEM技术分析多孔硅的表面形貌,研究了腐蚀条件对多孔硅的孔隙率、厚度、I-V特性的影响。结果表明,多孔硅的孔隙率随着腐蚀电流密度和腐蚀时间的增加而呈线性增大趋势;其厚度随着腐蚀电流密度的增加而近似呈线性增大趋势,随腐蚀时间的成倍增加而显著增大;其I-V特性表现出非整流的欧姆接触。
Nanoporous silicon is potential to be used for chemical and biological sensors.In this paper nanoporous silicon was fabricated by electrochemical etching.The surface topographies of porous silicon were characterized by SEM.Effect of etching conditions on the porosity,thickness,I-V characteristics of porous silicon was investigated.It was shown that the porosity of porous silicon increased linearly with etching current density and time.The thickness increased linearly with the etching current density and increased dramatically with time.The I-V characteristics of the porous silicon had non-rectifying properties of ohmic contacts.
出处
《功能材料与器件学报》
CAS
CSCD
北大核心
2012年第2期153-158,共6页
Journal of Functional Materials and Devices
关键词
多孔硅
电化学腐蚀
纳米材料
porous silicon
electrochemical etching
nanomaterial
