摘要
利用超高真空化学气相淀积(UHV/CVD)系统在 650℃生长出表面光亮的 GeSi单晶 在1200L/min分子泵与前级机械系间串接 450L/min分子泵,改善了生长环境串接分子泵后生长的 样品的X射线双晶衍射分析表明,外延层衍射峰半宽仅为 198arcsec, 且出现了 Pendellosung干涉条 纹,说明外延层结晶质量很好。
Ge_xSi_(1-x) crystal was grown by ultrahigh vacuum chemical vapor deposition (UHV/CVD) at 650℃, results showed that O_2 and/or H_2O caused the surface of the grown materials irregular in the growth process. An auxiliary 450L/min turbo molecular pump was connected serially between 1200L/min turbo molecular pump and mechanical pump, resulting in a much better growth condition. There is a peak of epilayer with the Full Width at Half Maximum (FWHM) of 198arcsec, as well as Pendellosung intederence fringes in Double-Crystal X-ray Diffraction (DCXRD) of one sample grown after a auxiliary turbo molecular pump was used, this is a indicative of the epilayer with excellent crystalline quality.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
2000年第2期215-217,共3页
Chinese Journal of Materials Research
基金
国家自然科学基金! 69896260-06
69746001
69787004.