摘要
采用数值方法 ,研究了半导体 In Sb材料受连续波激光辐照的熔融阈值 ,讨论了 In Sb材料的熔融阈值与入射激光波长、功率密度以及辐照时间的关系 ,同时考虑了载流子效应对靶内温升过程以及熔融阈值的影响 。
By means of a numerical method, it deals with the problem of the melt threshold of semiconductors induced by CW laser beam. The melt threshold as a functions of wavelength, power and irradiating time of irradiating laser are given. The influence of the carrier effects on the temperature rise and melt threshold, the distributions of temperature and carrier concentration in the targets are also discussed.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2000年第4期372-376,共5页
Chinese Journal of Lasers
关键词
激光辐照效应
锑化铟
连续波激光
laser irradiating effects, semiconductor material, melt threshold, carrier effects
