摘要
研究了超薄 (～ 1 0 nm) Co Si2 /Si的肖特基势垒接触特性 .Co( 3— 4nm) /Ti( 1 nm)双层金属通过快速热退火在 Si( 1 0 0 )衬底上形成超薄 Co Si2 薄膜 .X射线衍射测试表明该薄膜具有较好的外延特性 .用 I- V、C- V方法在 82— 332 K温度范围内测试了 Co Si2 /Si的肖特基势垒特性 .用弹道电子发射显微术直接测量了微区肖特基势垒高度 .测试表明 ,用 Co/Ti/Si方法形成的超薄Co Si2 /Si接触在室温时具有优良的肖特基势垒特性 ,I- V方法测得的势垒高度为 0 .59e V,其理想因子为 1 .0 1 ;在低温时 ,I- V方法测得的势垒高度随温度降低而降低 ,理想因子则升高 .采用肖特基势垒不均匀性理论 ,并假设势垒高度呈高斯分布 。
The ultrathin (～10nm) epitaxial CoSi\-2/n\|Si Schottky barrier contacts are investigated. By depositing Co(3—4nm)/Ti(1nm) bilayer on Si(100) and following by rapid thermal annealing, an ultrathin epitaxial CoSi\-2 film is grown on Si substrate. X\|ray diffraction spectra and Rutherford backscattering spectra show that the film has good epitaxial quality. The properties of Schottky barrier diode are characterized by I\|V and C\|V measurements over a temperature range of 82—332K. At room temperature, the Schottky diode shows a barrier height of 0 59eV with a ideality factor close to unity by I\|V measurement. The Schottky barrier height decreases with the decreasing of the temperature, which can be explained by the Schottky barrier inhomogeneties theory with an assumption of Gauss distribution of Schottky barrier height over the interface. The fluctuation of local barrier height of the ultra\|thin TIME (Ti\|Interlayer Mediated Epitaxy)\|formed CoSi\-2/Si contact is observed by ballistic\|electron\|emission microscopy.
基金
国家自然科学基金!( NSFC-697760 0 5)
