摘要
为得到GaAs表面稳定的钝化层,以(NH4)2S为主要对象,首先研究不同溶剂对钝化效果的影响,得出溶液极性越小,钝化效果越好的结论;研制出一种新的钝化溶液:Se+(NH4)2S+叔丁醇。通过光致发光(PL)谱对比(NH4)2S+去离子水、(NH4)S2+异丙醇、(NH4)2S+叔丁醇、Se+(NH4)2S+叔丁醇等几种不同含硫溶液钝化GaAs(100)表面的发光特性。通过测试PL发光谱发现,Se+(NH4)2S+叔丁醇溶液处理的GaAs(100)表面发光强度最强,是未做钝化处理的25倍左右。钝化处理后的基片在空气中放置数小时,PL谱未见明显退化。得出Se+(NH4)2S+叔丁醇不论从发光强度还是稳定性来说,都是较为理想的钝化溶液。
A novel type of sulf-solution has been successfully developed to passivate the GaAs （100） wafer sur- faces. The newly developed sulf-solution mainly contains Se ＋ （NH4）2S ＋ t - C4H9OH. The influence of the different sulf- solutions, such as （NH4）2S ＋ H20 （de-ionized water）, （NI-I4）2S ＋ C3H7OH, （NH4）2S ＋ t - C4H9OH, and Se ＋ （NH4）2S ＋ t- C4H9OH,on the passivation of the GaAs surfaces was characterized and compared with argon ion excited photolumi- nence （PL） spectroscopy. The preliminary results show that the sulf-solution, Se ＋ （NH4）2S ＋ t - C4H9OH, outperforms all the other three sulf-solutions. For instance, after immersion in the Se ＋ （NH4）2S ＋ t - C4H9OH solution at 50℃ for 20 min, the PL intensity was found to be 25 times higher than that of the control sample; no PL-intensity degeneration was observed after exposure to air for three hours.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2012年第5期376-378,共3页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金项目(61177019,61176048)
实验基金项目(9140C3102071001)
关键词
砷化镓
钝化
光致发光
非辐射复合
GaAs, Passivation, Photoluminescence, Non-radiation recombination
