摘要
主要讨论了电子束蒸发SiO2/HfO2薄膜的面形控制和损伤性能。研究了电子束蒸发工艺参数对薄膜应力以及面形的影响;分析了制备工艺对薄膜吸收、节瘤缺陷密度的影响,测量了制备薄膜的损伤阈值。研究结果表明:调整SiO2蒸发时的氧分压可以有效地将薄膜的应力控制在-250～-50 MPa。同时采用金属Hf蒸发可以显著地将节瘤缺陷密度从12.6mm-2降低至2.7mm-2,同时将损伤阈值从30J/cm2提高至55J/cm2。
The paper mainly discusses how to control the surface flatness and to improve the laser induced damage threshold（LIDT） of electron-beam evaporated SiO2/HfO2 high reflectors.The deposition parameters were optimized to control the film stress and wavefront distortion,and to reduce the film absorption,to decrease the defect density.The LIDT of the prepared films was also measured.The experimental results show that adjusting the pressure during SiO2 evaporation can control the film stress within the range of-250 to-50 MPa.Using hafnium and silica as starting materials can reduce the defect density from 12.6 to 2.7 mm-2 and increase the LIDT from 30 to 55 J/cm2.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2012年第6期1276-1280,共5页
High Power Laser and Particle Beams
基金
国家自然科学基金项目(61008030)
教育部博士点基金项目(20100072120037)
上海市晨光计划项目(10CG19)
关键词
应力
面形
吸收
节瘤缺陷
预处理
激光损伤
stress
surface flatness
absorption
nodular defects
laser conditioning
laser induced damage
