摘要
介绍了带隙基准原理和常规的带隙基准电路,设计了一种新型无运放带隙基准电路。该电路利用MOS电流镜和负反馈箝位技术,避免了运放的使用,从而消除了运放带隙基准电路中运放的失调电压和电源抑制比等对基准源精度的影响。该新型电路比传统无运放带隙基准电路具有更高的精度和电源抑制比。基于0.18μm标准CMOS工艺,在Cadence Spectre环境下仿真。采用2.5V电源电压,在-40℃～125℃温度范围的温度系数为6.73×10-6/℃,电源抑制比为54.8dB,功耗仅有0.25mW。
Theory of bandgap reference voltage and conventional bandgap reference circuits were presented, a novel bandgap reference circuit without op-amp was designed. In the circuit, MOS current mirrors and negative feedback clamping technique were used to avoid the use of operational amplifier, thus eliminating effects of offset and power supply rejection ratio （PSRR） of the operational amplifier on accuracy of bandgap voltage reference. Based on 0. 18μm standard CMOS process, the circuit was simulated using Spectre of Cadence. Simulation results showed that the bandgap voltage reference circuit had a temperature coefficient of 6.73×10 -6℃ in the temperature range from -40℃ to 125℃, and a PSRR of 54.8 dB, and it consumed 0. 25 mW of power from 2. 5 V supply.
出处
《微电子学》
CAS
CSCD
北大核心
2012年第3期336-339,共4页
Microelectronics
关键词
带隙基准电压源
无运放基准源
启动电路
Bandgap voltage reference
Op amp-less reference source
Startup circuit
