摘要
首先介绍了体硅 MOS器件在 2 5～ 30 0℃范围高温特性的实测结果和分析 ,进而给出了薄膜 SOI MOS器件在上述温度范围的高温特性模拟结果和分析 ,最后介绍了国际有关报道的Si C MOS器件在 2 2～ 4 50℃范围的高温特性。在上述研究的基础上 ,提出了体硅、SOI和 Si C
In this paper, the measurement results and the analyses of bulk silicon MOS devices at high temperature range(25～300 ℃) are presented. The high temperature characteristics of thin film SOI MOS devices are simulated and analyzed at the same temperature range. Finally, the reports of the high temperature characteristics of SiC devices at the temperature range of 22～450 ℃ are introduced. Based on the above studies the application temperature ranges and the opplication prospects of bulk silicon, SOI and SiC MOS devices are suggested.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2000年第1期7-14,共8页
Research & Progress of SSE
基金
国家自然科学基金资助科研项目!( 6973 60 2 0 )
