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Au-GaN肖特基结的伏安特性 被引量：4

I\V Characteristics of Au\|GaN Schottky Junction\+*
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摘要 在 MBE和 MOCVD两种方法制备的 n- Ga N材料上制作了 Au- Ga N肖特基结 ,测定了肖特基结的室温 I- V特性 .分析表明 :Ga Au\|GaN Schottky junction has been fabricated on n\|GaN materials by MOCVD and MBE.I\|V characteristics of the Schottky junctions have been determined at room temperature.It is shown that Schottky junction characteristics are seriously affected by the carrier concentration of GaN materials.
作者 林兆军 张太平 武国英 王玮 阎桂珍 孙殿照 张建平 张国义
机构地区 北京大学微电子所 中国科学院半导体研究所新材料部 北京大学物理系
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2000年第4期369-372,共4页 半导体学报（英文版）
基金 国家"九五"科技攻关资助项目
关键词 MBE MOCVD 肖特基结 伏安特性 氮化镓 MBE MOCVD GaN Schottky junction I\|V characteristics
分类号 TN311.7 [电子电信—物理电子学]
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Journal of Semiconductors
2000年 第4期

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