摘要
基于背景电荷不敏感单电子晶体管／场效应晶体管混合存储单元利用单电子晶体管源漏电流随栅电压周期振荡的特性工作，以半经典的单电子正统理论为基础，采用计算机数值模拟的方法，分析了背景电荷不敏感单电子晶体管／常规场效应晶体管混合存储单元的工作原理和基本特性．提出了存储单元中分别以三结电容耦合单电子晶体管和单电子旋转栅替代双结单电子晶体管的新结构，其主要思想是通过增加单电子器件中的串联隧道结数来抑制各种噪声．模拟结果表明，新结构的系统性能，特别是抗噪声性能有一定提高．
The background charge independent single electron transistor (SET)/field effect transistor (FET) hybrid memory cell works on the basis of the periodic dependence of the drain current of SET on its gate voltage. The characteristics of the hybrid memory cell were analyzed based on the semiclassical single electron orthodox theory by computer aided numerical simulation. New structures of replacing two junction SET with three junction capacitance coupled SET and single electron turnstile respectively were presented. The main idea is to improve the anti noise performance by increasing the number of tunneling junctions in series. The simulation results indicate the improvements in system performance, especially the anit noise performance of the new structure.
出处
《上海交通大学学报》
EI
CAS
CSCD
北大核心
2000年第2期161-168,共8页
Journal of Shanghai Jiaotong University
基金
国家自然科学基金!(69890224)
上海市AM 基金!(98009)
关键词
单电子晶体管
混合存储单元
场效应管
数值分析
background charge
single electron transistor
hybrid memory cell
capacitance coupled three junction single electron transistor
single electron turnstile
