摘要
用脉冲激光镀膜法 ,在不同的温度和氧压条件下 ,在Si(10 0 )片上制备了一系列的CeO2 膜。X射线衍射分析表明 ,在较低的氧压下生长的CeO2 膜为 (111)取向 ,在较高的氧压下生长的膜则为 (10 0 )取向。研究表明 ,CeO2 膜的取向对氧压显示了独特的依赖性 ,氧压对控制膜的结晶取向具有十分重要的作用。讨论了氧压对CeO2 薄膜结晶取向影响的可能机理。
A series of CeO 2 thin films were deposited on Si(100) substrates at a series of deposition temperatures and oxygen pressures by pulsed laser deposition.X-ray diffraction of these films revealed that the crystalline orientations of the CeO 2 films grown at low oxygen pressures were (111) orientation,while that grown at a relative high oxygen pressures possessed (100) orientation.Oxygen pressure was found to be important to control the crystalline orientation of CeO 2 thin films,and these films showed an unique oxygen pressure dependence of the orientation.A possible mechanism of the dependence of the orientation of CeO 2 films on the oxygen pressure was proposed to explain these results.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2000年第2期159-161,共3页
Journal of Functional Materials
基金
国家自然科学基金!资助项目 ( 1 9574 0 0 3 )
关键词
CeO2薄膜
结晶取向
脉冲激光沉积
气氛氧压
CeO 2 thin film
crystalline orientation
pulsed laser deposition
ambient oxygen pressure
