摘要
采用等离子体增强化学气相沉积(PECVD)法分别在玻璃衬底和p型薄膜硅衬底上制备了微晶硅薄膜。使用拉曼谱仪、紫外-可见分光光度计、傅里叶红外光谱仪等对微晶硅薄膜进行检测,重点研究了硅烷浓度、衬底温度对薄膜沉积速率和晶化率的影响。实验结果表明:两种衬底上薄膜的沉积速率均随硅烷浓度的增大、衬底温度的升高而变大。硅烷浓度对两种衬底的薄膜晶化率影响规律相同,即均随其升高而降低;但两种衬底的衬底温度影响规律存在差别:对玻璃衬底而言,温度升高,样品晶化率减小;而p型薄膜硅衬底则在温度升高时,样品晶化率先增大后减小。此外还发现,晶化率与薄膜光学性能及含氧量存在较密切关联。
Microcrystalline silicon thin films were deposited by PECVD on common glass substrate and p-type silicon film substrate,respectively.The effects of silane（SiH4） concentration and substrate temperature on the deposition rate and crystallizability of the films was characterized by Raman spectrometer,UV-Vis spectrometer and FTIR spectrometer.The results indicate that deposition rates of silicon films on two above-mentioned substrates all increase with increasing silane（SiH4） concentration or substrate temperature.Meanwhile,the crystalline volume fractions of the films deposited on both glass and P-Si film substrates decrease as the SiH4 concentration increasing.However,the substrate temperature has apparent different influences on the crystalline volume fractions for silicon films deposited on different substrates.The samples on glass sabstrate have larger crystalline volume fraction with substrate temperature increasing.The crystalline volume fraction of samples on P-Si film substrate increases at first and then decreases as the substrate temperature increasing.In addition,the crystalline volume fraction is verified to relate very closely to the optical characteristics and oxygen content of the microcrystalline silicon films.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2012年第3期599-604,610,共7页
Journal of Synthetic Crystals
基金
国家自然科学基金(50902028)
关键词
微晶硅薄膜
沉积速率
晶化率
microcrystalline silicon thin film
deposition rate
crystalline volume fraction
