摘要
利用脉冲YAG激光器 (脉宽为 1 0ns ,波长为 1 .0 6μm)对砷注入长波碲镉汞样品进行激光退火实验 ,分析注入退火引起的样品电学性质的变化 ,认为激光退火能够消除辐射损伤 ,并激活注入杂质。同时对电导率 迁移率谱这一实验方法也做了较详细的说明。
Arsenic implanted HgCdTe samples with long cutoff wavelength were annealed using the pulsed YAG laser irradiation method(pulse duration was 10 ns, wave length was 1.06 μm). The changes of electricity properties of the samples after implanted and annealed has been analysed. We thought that laser annealing could eliminate radiation damage and activate implant. At the same time, we discussed the conductivity mobility spectrum analysis method.
出处
《红外技术》
CSCD
北大核心
2000年第4期26-29,共4页
Infrared Technology
关键词
激光退火
砷注入
碲镉汞
laser annealing
mobility spectrum
