摘要
通过改变直流磁控反应溅射法的工艺条件 ,同时在玻璃和Si(10 0 )、Si(111)两种硅基底上制备了ZnO薄膜。用X射线衍射方法 (XRD和XRC)对薄膜结构性能进行测试表明 ,这些基底上生长的ZnO薄膜都得到了明显的c轴择优取向和较高的结晶度 ,硅基底上的薄膜结构性能普遍好于玻璃基底上淀积的薄膜。并对溅射工艺与结构的关系进行了分析。
Reactive d.c. magnetron sputtering was adopted to prepare ZnO thin films on glass,Si(100) and Si(111) substrates.Structural properties were then valued by X-ray diffraction and X-ray rocking curve to show that these ZnO films were all with high crystallinity and had a very strong preferred orientation along the c axis normal to the substrate surface.But the structural properties of ZnO films on Si substrates were generally better than that of ZnO films on glass.Moreover,the dependence of structure on sputtering process was also studied.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2000年第B05期77-78,共2页
Journal of Functional Materials
关键词
直流磁控溅射
ZNO薄膜
择优取向
dc magnetron sputtering
ZnO thin films
preferred orientation
structural properties
