摘要
单晶硅中注入高剂量的Ｃ＋ 离子，注入能量为５０ｋｅＶ，经高温退火后形成β－ＳｉＣ沉淀，再经电化学腐蚀形成多孔β－ＳｉＣ，样品表面蒸上一层半透明的金膜，在正向偏压高于２５Ｖ 时，可以获得波长约为４４７ｎｍ 的蓝光发射， 而且该蓝光发射随着电压的升高而增强．文中还将多孔β－ＳｉＣ薄膜的电致发光和其光致发光进行了比较。
High dose of C\++ ions are implanted into crystal silicon wafers at an energy of 50keV. A continuous β \|SiC layer is formed after thermal annealing. Conventional anodization technique is used to turn this layer into a porous \%β\%\|SiC layer. A semitransparent gold film is selectively evaporated on the surface of the sample to form the top contact. Electroluminescence (EL) measurement is performed on the samples. When the applied voltage is higher than 25 V, blue (~447 nm) EL can be obtained. The EL mechanism is discussed.
基金
国家自然科学基金
