摘要
为了减小硅化物形成过程中消耗的衬底硅，提出添加非晶Ｓｉ的新方法，并探索了Ｃｏ／Ｓｉ／Ｔｉ／Ｓｉ及Ｃｏ／Ｓｉ（×７）／Ｔｉ／Ｓｉ多层薄膜固相反应的两种途径．实验采用四探针、ＸＲＤ、ＲＢＳ等多种方法对固相反应过程进行了研究，对反应形成的ＣｏＳｉ２ 薄膜进行了测试分析，并探索了在ＳｉＯ２／Ｓｉ及图形片上的选择腐蚀工艺．结果表明，当选择合适的Ｃｏ∶Ｓｉ原子比，恰当的两步退火方式及选择腐蚀溶液，两种方法都可以形成自对准硅化物结构．研究了这两种固相反应过程，发现在一定的Ｃｏ∶Ｓｉ原子比范围内，这两种方法制备的ＣｏＳｉ２ 薄膜都有一定的外延特性，其中第一种途径得到的ＣｏＳｉ２
To reduce the substrate Si consumption during the silicide formation,a method of adding amorphous Si into as\|deposited structure was proposed.Two approaches,Co/Si/Ti/Si and Co/Si(×7)/Ti/Si multilayer solid phase reaction were investigated.The reaction process,the structure of the film and the electrical property were investigated by four point probe,X\|ray diffraction (X\|Ray),Rutherford backscattering (RBS).The selective etching process both on SiO\-2/Si wafer and patterned CMOS wafer were investigated.The results show that when choosing proper Co∶Si atomic ratio,annealing procedure and proper selective etching solution,both reactions can form self\|aligned structures.The results also show that when Co∶Si is less than certain atomic ratio (Co∶Si<1∶1),the CoSi\-2 film obtained by both methods can have epitaxial characteristic and the film obtained by Co/Si/Ti/Si multilayer reaction has better epitaxial quality.
基金
国家自然科学基金
上海市应用材料研究和发展基金
关键词
固相反应
硅化物
多层薄膜
Solid Phase Reaction
Silicide
Self\|Aligned
Multilayer
