摘要
在铁磁层(FM)/反铁磁层(FeMn)耦合体系中插入Pt插层或对靠近FM/FeMn界面处的FeMn掺杂Pt元素,研究了体系的交换偏置场H_(ex)及矫顽力H_c随Pt插层深度dPt与Pt掺杂层厚度t_(ptFeMn)的变化关系.实验结果表明,引入Pt插层后NiFe/FeMn(d_(pt))/Pt/FeMn体系的未补偿磁矩(UCS)的数量得到很大的提高,从而对H_(ex)与H_c起到增强的作用;同时,从实验结果可以推测FeMn层内部UCS的分布深度约为1.3 nm.另外,对靠近FM/FeMn界面处的FeMn掺杂Pt元素,发现掺入Pt元素后体系的H_(ex)得到有效增强,这是因为掺入Pt元素后体系UCS的数量也得到很大的提高.
By inserting a Pt spacer between ferromagnetic （FM）/antiferromagnetic （FeMn） coumpling systems or by doping Pt element in the AFM layer, the depth dependence of Pt spacer and the thickness dependence of Pt doping layer on exchange bias （Hex） and coercivity （He） are investigated. The results indicate that the number of uncompensated spin moments （UCSs） of NiFe/FeMn（dpt）/Pt/FeMn increases as a result of inserting Pt spacer, which enhances Hex and He of the system. Also, the distribution depth about 1.3 nm of UCS of FeMn in NiFe/FeMn system is inferred. Besides, by doping Pt element in FeMn near the FM/FeMn interlayer, we find that the Hex of the system is enhanced efficiently, which is caused by the huge increase of the number of UCSs in the system.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2012年第16期437-442,共6页
Acta Physica Sinica
基金
国家自然科学基金(批准号:51071023
50831002)资助的课题~~
关键词
磁性多层膜
交换耦合
Pt插层
未补偿磁矩
magnetic multilayer, exchange coupling, Pt spacer, uncompensated spin moment
