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Optimum design of photoresist thickness for 90-nm critical dimension based on ArF laser lithography

Optimum design of photoresist thickness for 90-nm critical dimension based on ArF laser lithography
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摘要 In this work, a 90-nm critical dimension (CD) technological process in an ArF laser lithography system is simulated, and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the absence and presence of bottom antireflection coating (BARC). By analysing the simulation result, it can be found that in the absence of BARC the CD swing curve effect is much bigger than that in the presence of BARC. So, the BARC should be needed for the 90-nm CD manufacture. The optimum resist thickness for 90-nm CD in the presence of BARC is obtained, and the optimizing process in this work can be used for reference in practice. In this work, a 90-nm critical dimension (CD) technological process in an ArF laser lithography system is simulated, and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the absence and presence of bottom antireflection coating (BARC). By analysing the simulation result, it can be found that in the absence of BARC the CD swing curve effect is much bigger than that in the presence of BARC. So, the BARC should be needed for the 90-nm CD manufacture. The optimum resist thickness for 90-nm CD in the presence of BARC is obtained, and the optimizing process in this work can be used for reference in practice.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第8期216-221,共6页 中国物理B(英文版)
基金 Project supported by the National Special Program of China (Grant No. 2009ZX02204-008) the National Basic Research Program of China (Grant No. 2007AA01Z333)
关键词 LITHOGRAPHY optimization photoresist thichness critical dimension swing curve lithography, optimization, photoresist thichness, critical dimension, swing curve
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参考文献20

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