摘要
稀磁半导体是一种能同时利用电子的电荷和自旋属性,并兼具铁磁性能和半导体性能的自旋电子学材料。本文主要介绍ZnO、In2O3等氧化物稀磁半导体的研究进展,一是从实验角度介绍其制备、结构、磁性、电输运性质等特性;二是从理论角度对其磁交换能、电子结构、居里温度和磁性产生的机制进行阐述;三是在稀磁半导体的基础上进一步延伸,介绍其相关的异质结构的磁电阻效应,并在文章的最后对氧化物稀磁半导体的研究进行总结和展望。
Diluted magnetic semiconductors（DMSs） are a kind of spin electronics materials in which the charge and spin degrees of electrons are utilized simultaneously to achieve both semiconducting and magnetic properties.In this article,we review the research progress in ZnO and In 2 O 3 oxidebased DMSs.First,we present the preparation,structure,magnetism and transport of these materials from the viewpoint of experiment.Second,we evaluate the magnetic coupling energy,electronic structure,Curie temperature,and magnetism mechanism from theoretical view.In addition,we highlight the magnetoresistive effect in their related heterogeneous structures and also give an overview and outlook on oxide-base diluted magnetic semiconductors.
出处
《物理学进展》
CSCD
北大核心
2012年第4期199-232,共34页
Progress In Physics
基金
国家自然科学基金项目(51025101
51101095
11104173)
教育部博士点基金项目(20101404120002)
山西省各类基金项目(2011021021-1
2011021021-2
晋教科函[2010]20号
晋留管办发[2010]14号)的共同支持
关键词
氧化物稀磁半导体
自旋注入
异质结构
oxide-based diluted magnetic semiconductors
spin injection
heterogeneous struc-ture
