摘要
通过溶胶–凝胶法制备纯的VO2和W掺杂的VO2薄膜,并且进行了XPS、AFM和XRD的分析与表征,并观察了其微观形貌和结构.同时研究了VO2和W掺杂VO2在红外光谱（λ=4μm）和THz（0.3~1.0 THz）区域的金属–绝缘转变性能.结果表明：室温下W掺杂的VO2薄膜在红外和THz区域的初始透过率都比纯的VO2薄膜低.在THz波段,W掺杂的VO2表现出更低的相变温度.同时在VO2和W掺杂VO2相变过程中,观察到了金属–绝缘转变和结构转变的现象,W掺杂VO2具有明显的峰位偏移现象.
Vanadium dioxide and tungsten-doped （W-doped） vanadium dioxide thin films deposited by aqueous Sol-Gel method were characterized with several different techniques （i.e. X-ray photoelectron spectroscope, atomic force microscope, X-ray diffraction）, to determine their morphology and microstructure. Their metal-to-insulator （MIT） phase transition behavior in infrared spectral region （λ=4 μm） and terahertz （THz） spectral region （0.3–1.0 THz） were observed respectivele. The results demonstrate that the transmittance of W-doped VO 2 film at room temperature is visibly lower than that of undoped VO 2 film in both infrared and terahertz spectral region. The transition temperature of W-doped VO 2 film is also lower than that of undoped VO 2 film in the THz range. The MIT and structural phase transition （SPT） are observed during the phase transition of VO 2 and W-doped VO 2 , and an obvious change of peak position occurs in W-doped VO 2 film.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2012年第8期891-896,共6页
Journal of Inorganic Materials
基金
National Natural Science Foundation of China(61072036)
关键词
二氧化钒
红外透过率
太赫兹
钨掺杂
vanadium dioxide
infrared transmittance
terahertz
tungsten doped
