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Finite size effect on the Raman frequency of phonons in nano-semiconductors

Finite size effect on the Raman frequency of phonons in nano-semiconductors
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摘要 A comprehensive study on Raman spectroscopy with different excitation wavelengths, sample sizes, and sample shapes for optic phonons (OPs) and acoustic phonons (APs) in polar and non-polar nano-semiconductors has been performed. The study affirms that the finite size effect does not appear in the OPs of polar nano-semiconductors, while it exists in all other types of phonons. The absence of the FSE is confirmed to originate from the long-range FrShlieh interaction and the breaking of translation symmetry. The result indicates that the Raman spectra of OPs cannot be used as a method to characterize the scale and crystalline property of polar nano-semiconductors. A comprehensive study on Raman spectroscopy with different excitation wavelengths, sample sizes, and sample shapes for optic phonons (OPs) and acoustic phonons (APs) in polar and non-polar nano-semiconductors has been performed. The study affirms that the finite size effect does not appear in the OPs of polar nano-semiconductors, while it exists in all other types of phonons. The absence of the FSE is confirmed to originate from the long-range FrShlieh interaction and the breaking of translation symmetry. The result indicates that the Raman spectra of OPs cannot be used as a method to characterize the scale and crystalline property of polar nano-semiconductors.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第9期7-11,共5页 中国物理B(英文版)
基金 Project supported by the National Basic Research Program of China (Grants Nos. 2009CB929403 and 2012CB825700) the National Natural Science Foundation of China (Grants Nos. 10774006 and 60876002)
关键词 Raman spectral finite size ef[ect NANO-SEMICONDUCTOR Raman spectral, finite size ef[ect, nano-semiconductor
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