摘要
重点研究了多晶硅扩散氧化层对电池性能的影响,并对大规模生产多晶硅扩散工艺进行了优化研究。采用少子寿命测试仪分析了扩散前后的硅片少子寿命,发现当扩散氧化时的干氧流量控制在2800sccm,扩散后的方块电阻控制在60～70Ω/□时,扩散后硅片少子寿命最高达到了10.45μs,与扩散前的硅片少子寿命相比延长了5倍多;此时的太阳电池并联电阻和短路电流分别高达40.4Ω和8522mA,光电转换效率也由16.69%(干氧流量2000sccm)提高到了16.83%。此外,主要针对扩散氧化层对片内方阻均匀性及少子寿命的影响做了解释。
Effect of multicrystalline silicon diffusion oxide layer on solar cell performance and the optimum diffusion process were investigated. Minority carrier lifetime on silicon wafer was analyzed by minority carrier lifetime measureing instrument. The results show that minority carrier lifetime on silicon wafer after diffusion reaches the highest value of 10. 45μs, which is 5 times longer than that before diffusion, while dry oxygen flow is 2800sccm and square resistance is 60-70Ω/口. The solar battery parallel resistance and short circuit current are also amounts to 40. 4Ω and 8522mA, and photoelectric conversion efficiency increases to 16. 83% comparing to 16. 69% while dry oxygen flow is 2000sccrn. Moreover, the effect of diffusion oxide layer on the inner side friction resistance uniformity and minority carrier lifetime was explained.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2012年第16期35-37,46,共4页
Materials Reports
基金
国家自然科学基金(20976016)
长沙市科技局重点攻关项目(K1001020-11)
关键词
扩散
氧化层
少子寿命
太阳电池
多晶硅
diffusion, oxide layer, the minority carrier lifetime, solar cell, multicrystalline silicon
