摘要
用NaOH/NH4F/Na2CO3溶液体系对单晶硅(100)进行了表面织构。结果发现腐蚀所得表面沟壑纵横,沟壑间是类似金字塔的小凸起。在优化条件下,平均反射率低且不随腐蚀时间的延长而增大,可重复性好,是比较理想的碱腐蚀液。
Texturization of Si（100） was investigated in NaOH/NH4F/Na2CO3 system. The grooves were everywhere on the wafer surface and pyramid-like hillocks were formed among grooves after etching. In optimum experimental conditions, the average reflectance was low and didn＇t increase with etch time. Moreover, the repeatability was welt. It should be a favorable alkaline etching solution.
出处
《电源技术》
CAS
CSCD
北大核心
2012年第9期1301-1302,共2页
Chinese Journal of Power Sources
