摘要
In the present work, the photoluminescence （PL） character of single crystal sapphire （A1203） samples with and without im- plantation by 110 keV He and/or irradiation by 230-MeV Pb ions, as well as subsequently annealing at 600, 900 and 1100 K （TA） was studied. The modification of the structure and optical properties induced by ion irradiation were analyzed by using PL and FTIR spectra. The PL measurements showed that luminescence peaks located at 390, 413,450, and 564 nm appeared in irradiated samples. The luminescence peaks appeared at 360, 380, and 516 nm after annealing. Infrared spectra showed a broad- ening of the absorption band between 460 cm^-1 and 510 cm^-1, which indicated the formation of strongly damaged regions in the Al2O3 samples. The position shift of the absorption band in 1000-1300 cm^-1 tended towards to a higher wavelength.
In the present work,the photoluminescence(PL) character of single crystal sapphire(Al2O3) samples with and without implantation by 110 keV He and/or irradiation by 230-MeV Pb ions,as well as subsequently annealing at 600,900 and 1100 K(TA) was studied.The modification of the structure and optical properties induced by ion irradiation were analyzed by using PL and FTIR spectra.The PL measurements showed that luminescence peaks located at 390,413,450,and 564 nm appeared in irradiated samples.The luminescence peaks appeared at 360,380,and 516 nm after annealing.Infrared spectra showed a broadening of the absorption band between 460 cm 1 and 510 cm 1,which indicated the formation of strongly damaged regions in the Al2O3 samples.The position shift of the absorption band in 1000-1300 cm 1 tended towards to a higher wavelength.
基金
supported by the National Natural Science Foundation of China (Grant Nos. 10705037 and 10975165)
