摘要
以 Sn( OH) 4 水合胶体为原料 ,采用溶胶 -凝胶方法在 Si片上制备了 Sn O2 纳米晶薄膜 ,利用差热、热重、X光衍射以及原子力显微镜对薄膜的合成以及特性进行了分析 ,结果表明 :在60 0℃条件下烧结结晶的纳米晶薄膜表面平整 ,具有金红石结构 ,平均粒度在 1 0 nm左右 .以该薄膜为敏感体采用平面工艺制成的 FET式气敏元件在常温下对乙醇蒸汽具有非常好的选择性 .
Selecting Sn(OH) 4 colloid as raw material,the thin nanocrystalline SnO 2 film is successfully fabricated on the silicon substrate by Sol\|gel method. Synthesizing procedure and the characteristic of the films are analyzed by DTA, TG, XRD and AFM techniques. The results show that at the temperature of 600℃, the film has a perfect surface and rutile structure with the grain size being around 10nm. The FET gas sensor fabricated with this kind of nanocrystalline film gate is found to be of good selectivity to the ethanol gas at room temperature.
基金
国家自然基金资助项目!(编号为 69774 0 2 7)
关键词
纳米晶
二氧化锡
气敏薄膜
SnO_2
nanocrystalline
gas sensitivity
field effect transistor
