摘要
采用真空电阻炉对铟锡合金进行了实验研究。首先通过实验确定了较好的蒸馏时间和蒸馏温度范围。最后根据化验结果确定了对生产具有指导意义的实验条件,即对金属铟质量分数为90%的铟锡合金进行真空蒸馏时,采取的对生产具有指导意义的工艺条件为蒸馏温度1250℃,蒸馏时间60 min;蒸馏温度1300℃,蒸馏时间40 min;所得的金属铟的含铟量大于99%。
Here, we addressed the cradle-to-cradle strategy of indium. Indium was extracted by vacuum distillation from the indium-tin （indium,90% （wt） ） alloy, recycled from the indium-tin oxide （ITO） coatings of the electronic trash. The impacts of vacuum distillation conditions, including thedistillation time and temperature, and pressure on the indium condensate were experimentally studied. The contents of the condensate and slag were characterized. The results show that the 99% pure indium can be extracted under the optimized conditions：a distillation temperature of 1250℃ ,a distillation time for 60 min,and/or at 1300℃ for 40 min.We suggest that the indium recovery from ITO coating on industrial scale be feasible under such optimized conditions.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2012年第10期902-906,共5页
Chinese Journal of Vacuum Science and Technology
关键词
铟锡
真空蒸馏
回收
Indium tin, Vacuum distillation, Recovery
