摘要
基于多晶硅的化学气相沉积技术与工艺,运用计算流体力学(CFD)的气体运动的组分运输和表面反应动力学模型,采Ansys-Fluent对多晶硅的生长过程进行模拟计算,运用有限元应力分析(FEA)方法,对复杂设备结构进行热应力计算和强度安全性校核,研发并设计一系列大型高产能、低能耗的多晶硅反应器。该系列的反应器广泛应用于国内外多晶硅生产线,产能达500 t/a,能耗低至45 kW/kg。
Based on Chemical vapor deposition （CVD） technique for polysilicon, the gas flow field of the CVD process in the reactor was numerically simulated by using computational fluid dynamics （CFD） package ANSYS-FLUENT. The model which combines species transport and finite-rate surface kinetics was established and used in this work. The thermal stress fields combined with safety check of the complicated structure in the reactor was analyzed by finite element analysis （FEA） method. Series of the high-capacity and low-cost polysilicon CVD reactor were developed and applied on the production lines, their capacity up to 500 tons/a, and the power consumption low to 45 kW/kgSi.
出处
《化工设备与管道》
CAS
2012年第5期24-28,共5页
Process Equipment & Piping
关键词
多晶硅
化学气相沉积
计算流体力学
有限元应力分析
polysilicon
chemical vapor deposition （CVD）
computational fluid dynamics （CFD）
finite element analysis （FEA）
