摘要
基于太阳光谱的特点和晶硅材料吸收光谱的性质,首先分析了超薄晶硅太阳电池上表面的陷光要求,然后利用传递矩阵法(TMM)和频域有限差分(FDFD)法设计上表面增透膜结构和织构结构,最后利用FDFD法分析了SiO2/SiN4双层增透膜结构和三角条带式表面织构结构构成的组合结构的光吸收效果。研究结果表明,在超薄晶硅太阳电池的有效吸收光谱范围(波长范围200～1 200nm)内,双层增透膜比单层增透膜具有更小的反射损耗;一维光子晶体表面织构结构中,使用三角条带式一维光子晶体比矩形条带式一维光子晶体具有更小的反射损耗。借助于透膜结构和三角条带式织构结构的优化参数,设计出入射角θ45°、波长处于200～1 200nm范围内和反射率小于5%的上表面结构形式。
Based on the spectrum features of sunlight and the absorption spectrum properties of crystalline Si materials, the light trapping requirements of upper-surface texture structures on ultra-thin crystalline silicon solar cells are first analyzed. Then the anti-reflection coating structures and texture structures on the upper surface are designed by transfer matrix method （TMM） and frequency domain finite difference （FDFD） method,respectively. Finally,the absorption effects of upper-surface texture structures combi- ning with anti-reflection coating structures are analyzed by FDFD method. The results show that the los- ses of double layer anti-reflection coatings are smaller than those of a single layer anti-reflection coating and the losses of surface texture with a triangular strip shape of one dimensional photonic crystals （1 DPCs） are smaller than those with rectangular strip shape of 1 DPCs. In addition,based on the optimal parameters of anti-reflection coating and surface texture with triangular strip 1 DPC,an effective upper- surface structure, which realizes the reflectivity less than 5 % when incident angle is less than 45° in the wavelength range between 200 nm and 1200 nm,is obtained.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2012年第11期2066-2073,共8页
Journal of Optoelectronics·Laser
基金
国家自然科学基金(60974071)
辽宁省自然科学基金(201102005)资助项目
关键词
太阳电池
晶硅材料
陷光结构
光子晶体
solar cell； crystalline silicon material； light-trapping structure； photonic crystal
