期刊文献+

铝粉粒度和烧结温度对硅太阳能电池铝背场结深及光电转化率的影响 被引量:4

Effects of aluminum particle size and sintering temperature on monocrystalline solar cells junction depth and conversion rate
下载PDF
导出
摘要 分别采用4种不同粒度(平均粒度为1.37、3.95、6.08和9.73μm)的铝粉制备单晶硅太阳能电池铝浆,研究铝粉粒度和烧结温度(800、830、850和870℃)对铝背场结深和光电转化率的影响。结果表明:采用不同粒度的铝粉在相同条件下制备的铝背场,经800℃烧结后,结深均为4.05μm左右,其中粒度为6.08μm的铝粉,其光电转化率最高,达到17.2%;烧结温度从800℃升高到870℃时,铝背场结深从4.05μm增加到4.75μm,转化率略有提高。 Solar battery aluminum paste was preparaed using four different particle sizes(1.37,3.95,6.08,9.73 μm) of aluminum respectivly.The effects of particle size of aluminum and sintering temperature(800,830,850 and 870 ℃) on the junction depth of aluminum back surface field(BSF) and conversion rate of aluminum paste were studied.The results show that p-n junction depth of aluminum fabricated by different size aluminum powder is about 4.05 μm after sintered at 800 ℃.When the aluminum particle size is 6.08 μm,the maximum conversion efficiency value of 17.2% is obtianed.When sintering temperature increasing from 800 ℃ to 870 ℃,the p-n junction depth of BSF increases from 4.05 μm to 4.75 μm,the conversion rate of aluminum paste increases slightly.
出处 《粉末冶金材料科学与工程》 EI 北大核心 2012年第5期617-621,共5页 Materials Science and Engineering of Powder Metallurgy
关键词 背场 粘度 粒度 p-n结深 back surface field viscosity particle size p-n junction
  • 相关文献

参考文献9

  • 1陆广广,宣天鹏.电子浆料的研究进展与发展趋势[J].金属功能材料,2008,15(1):48-52. 被引量:65
  • 2彭银生,刘祖明,陈庭金.晶体硅太阳电池铝背场的研究[J].云南师范大学学报(自然科学版),2004,24(1):34-36. 被引量:5
  • 3ALAMO J D, EGUREN J, LUQUE A. Operating limits of Al-aUoyed high-low junctions for BSF solar cells [J]. Solid-State Electronics (S0038-1101), 1981, 24(5): 415-420.
  • 4马亚红,张宏,徐晓宙,韩鹏.一种用于太阳能电池背电极的超细球形铝粉浆料[J].电子元件与材料,2010,29(7):43-45. 被引量:9
  • 5张海珠,胡满成,牛净平,康永宁,胡菲,王蕾.硅基光伏电池铝浆性能的研究[J].陕西师范大学学报(自然科学版),2010,38(6):53-56. 被引量:6
  • 6KAMINSKI A, VANDELLE B, FAVE A, et al. Aluminium BSF in silicon solar ceils [J]. Solar Energy Materials & Solar cells, 2002, 72: 373-379.
  • 7KUZNICKI Z T, SIDIBE S, MOREL J. Aluminum-BSF profile realized by diffusion implantation and thermal annealing [C]//Ossenbrink H A. 14th European Photovolatic Solar Energy Conference. Barcelona, Spain: Stephens H S, 1997: 164-167.
  • 8FULLER C S, D1TZENBEGER J A. Diffusion of donor and acceptor elements in silicon [J]. Journal of Applied Physics, 1956, 27(5): 544-553.
  • 9NARASIMHA S, ROHATGI A. An Optimized rapid aluminum back surface field technique for silicon solar ceils [J]. IEEE Transaction on Electron Devices, 1999, 7(46): 1363-1370.

二级参考文献37

共引文献77

同被引文献18

引证文献4

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部