摘要
为了获得高功率、高重频半导体激光脉冲,设计了一种体积小、重量轻、造价低的纳米级大功率半导体激光器驱动电源。采用改进的单稳态触发器产生窄脉冲,经放大后驱动快速开关MOSFET获得大电流窄脉冲;电源脉冲电流驱动能力0A～80A,脉冲上升时间2.8ns,下降时间3.8ns,脉冲宽度5ns～500ns范围内可调,最小5.2ns,重复频率可达200kHz。用该电源实验测试了激光波长为905nm的半导体激光器,在重复频率为10kHz时,激光脉冲峰值功率达到70W以上。结果表明,采用窄脉冲驱动MOSFET可以得到高重复频率10ns以内的大电流窄脉冲,可以驱动大功率半导体激光器,若驱动100A以上的激光器需进一步研究。
In order to obtain high power and high pulse-repetition-frequency （PRF） laser pulse, a nanosecond nanosecond- level laser diode driver with advantages of small size, light weight and low cost was designed. The narrow pulse, which was generated by an improved mono-stable circuit, was amplified to high current narrow pulse to drive metal-oixde-semiconducor fie/d- effect-transistor（MOSFET） switch for narrow pulse of high current. The output current of the driver was 0A -80A; the rise time of the pulse was 2. 8ns; the fall time was 3.8ns; the pulse width can could be adjusted between 5ns and 500ns; the narrowest with the minimal pulse width can be of 5.2ns; and the PRF pulse repetition frequency was up to 200kHz. When this power supply was used for a 905nm laser diode, its peak laser power was up to 70W at PRF of 10kHz. The results show that the narrow pulse can be used to drive MOSFET to obtain 10ns or narrower pulse with high PRF and current, and this driver can completely meet the demand for driving high power laser diode. Further research is necessary for 100A or higher drive current .
出处
《激光技术》
CAS
CSCD
北大核心
2012年第6期731-734,共4页
Laser Technology
基金
山东省科技发展计划资助项目(2009GG10005006)
